Title :
Distributed phase shifter with pyrochlore bismuth zinc niobate thin films
Author :
Park, Jaehoon ; Lu, Jiwei W. ; Boesch, Damien S. ; Stemmer, Susanne ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
A monolithic Ku-band phase shifter employing voltage tunable Bi1.5Zn1.0Nb1.5O7 (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175° was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit ∼50°/dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films.
Keywords :
MMIC phase shifters; bismuth compounds; circuit tuning; coplanar waveguide components; dielectric thin films; sputtered coatings; thin film circuits; zinc compounds; 15 GHz; 3.5 dB; BZN thin films; Bi1.5Zn1.0Nb1.5O7; distributed coplanar waveguide; distributed phase shifter; loaded-line phase-shifter; monolithic Ku-band phase shifter; monolithic tunable microwave circuit; pyrochlore bismuth zinc niobate thin films; radio frequency magnetron sputtering; single-crystal sapphire substrates; voltage tunable thin film parallel plate capacitors; Bismuth; Capacitors; Niobium compounds; Phase shifters; Radio frequency; Sputtering; Transistors; Tunable circuits and devices; Voltage; Zinc; Bismuth zinc niobate (BZN); coplanar waveguides (CPW); nonferroelectric; phase shifters; thin films; tunable dielectric;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.873528
