DocumentCode :
922469
Title :
A compact 43-GHz monolithic differential VCO in 0.5-μm InP DHBT technology
Author :
Yu, M. ; Ward, R.J. ; Newgard, R.A. ; Urteaga, M.
Author_Institution :
Rockwell Collins Inc, Cedar Rapids, IA, USA
Volume :
16
Issue :
5
fYear :
2006
fDate :
5/1/2006 12:00:00 AM
Firstpage :
281
Lastpage :
283
Abstract :
A compact monolithic integrated differential voltage controlled oscillator (VCO) using 0.5-μm emitter width InP/InGaAs double-heterostructure bipolar transistors with a total chip size of 0.42 mm × 0.46 mm is realized by using cross-coupled configuration for extremely high frequency satellite communications system applications. The device performance of Fmax greater than 320 GHz at a current density of 5 mA/μm2 and 5-V BVceo allows us to achieve a low phase noise 42.5-GHz fundamental VCO with -0.67-dBm output power. The VCO exhibits the phase noise of -106.8 dBc/Hz at 1-MHz offset and -122.3 dBc/Hz at 10-MHz offset from the carrier frequency.
Keywords :
III-V semiconductors; bipolar MIMIC; gallium arsenide; indium compounds; millimetre wave oscillators; phase noise; satellite communication; voltage-controlled oscillators; 0.42 mm; 0.46 mm; 0.5 micron; 42.5 GHz; 43 GHz; 5 V; DHBT technology; InP-InGaAs; cross-coupled configuration; double-heterostructure bipolar transistors; monolithic differential VCO; monolithic integrated differential voltage controlled oscillator; phase noise; satellite communications system; Bipolar transistors; Current density; DH-HEMTs; Frequency; Indium phosphide; Inductors; Noise level; Phase noise; Semiconductor device noise; Voltage-controlled oscillators; Extremely high frequency (EHF); InP double-heterostructure bipolar transistor (DHBT); Ka band; phase noise; voltage controlled oscillator (VCO);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2006.873499
Filename :
1626261
Link To Document :
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