Title :
Behaviour of burst noise under mechanical stress
Author :
Rodríguez, T. ; Mulet, J. ; Luque, A.
Author_Institution :
Universidad Politécnica de Madrid, Laboratorio de Semiconductores, Escuela Superior de Telecomunicación, Madrid, Spain
Abstract :
Measurements of the amplitude and statistical parameters of burst noise when a transistor is subjected to external mechanical stress are presented. The parameters measured are the number of bursts per second and the average duration of the burst and no-burst states.
Keywords :
bipolar transistors; noise; semiconductor device testing; stress effects; bipolar transistors; burst noise; noise; semiconductor device testing; stress effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730179
