Title :
High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz
Author :
Eisele, Heribert ; Kamoua, Ridha
Author_Institution :
Inst. of Microwaves & Photonics, Leeds Univ., UK
fDate :
5/1/2006 12:00:00 AM
Abstract :
InP Gunn devices with graded doping profiles were evaluated for second-harmonic power extraction above 260 GHz. The best devices generated radio frequency(RF) output power levels of 3.9 mW at 275 GHz, 4.8 mW at 282 GHz, 3.7 mW at 297 GHz, 1.6 mW at 329 GHz, and 0.7 mW at 333 GHz with corresponding dc-to-RF conversion efficiencies of 0.24%, 0.31%, 0.32%, 0.19%, and 0.07%. The highest observed second-harmonic frequency was 345 GHz. Two devices each in an in-line power combining circuit generated 6.1 mW at 285 GHz and 2.7 mW at 316 GHz with combining efficiencies of more than 65%.
Keywords :
Gunn oscillators; III-V semiconductors; doping profiles; indium compounds; millimetre wave oscillators; power combiners; submillimetre wave oscillators; 0.7 to 6.1 mW; 260 to 330 GHz; InP; InP Gunn devices; doping profiles; high-performance oscillators; power combiners; power combining circuit; radio frequency output power levels; second-harmonic frequency; second-harmonic power extraction; Circuits; Doping profiles; Gunn devices; Heat sinks; Indium phosphide; Millimeter wave technology; Oscillators; Power combiners; Power generation; Radio frequency; Gunn devices; millimeter-wave devices; millimeter-wave generation; millimeter-wave oscillators; oscillator noise; phase noise; power combining; submillimeter-wave devices; submillimeter-wave generation; submillimeter-wave oscillators;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.873498