Title :
Gate current in AlInAs/GaInAs heterostructure insulated-gate field-effect transistors (HIGFETs)
Author :
Kamada, Mikio ; Ishikawa, Hideto ; Feng, Milton
Author_Institution :
Sony Corp. Res. Center, Yokohama, Japan
fDate :
8/1/1993 12:00:00 AM
Abstract :
A self-aligned WSi gate heterostructure insulated-gate field-effect transistor (HIGFET) with a gate length of 1 μm was fabricated using an AlInAs/GaInAs heterostructure grown by atmospheric pressure metal-organic chemical vapor deposition (MOCVD). The gate current is investigated experimentally and theoretically. The measured gate current was found to be about two orders of magnitude higher than predicted by theory. The origin of this increase is unclear. However, the theoretical result suggests the possibility of reducing the gate current in AlInAs/GaInAs HIGFETs
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; insulated gate field effect transistors; 1 micron; AlInAs-GaInAs; HIGFETs; MOCVD; atmospheric pressure metal-organic chemical vapor deposition; gate current; gate length; heterostructure insulated-gate field-effect transistors; self-aligned WSi gate; Application specific integrated circuits; Digital integrated circuits; FETs; Indium phosphide; Insulation; MOCVD; Microelectronics; Sputtering; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
