Title :
Effect of gate poly-silicon depletion on MOSFET input impedance
Author :
Bandi, S.P.R. ; Washburn, C. ; Mukund, P.R. ; Kolnik, J. ; Paradis, K. ; Howard, S. ; Burleson, J.
Author_Institution :
Rochester Inst. of Technol., NY, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
One of the most challenging problems encountered in developing RF circuits is accurate prediction of MOS behavior at microwave signal and data frequencies. An attempt is made in this work to accurately model the device input impedance for the 1-20-GHz frequency range. The effect of device length and single-leg width on the input impedance is studied with the aid of extensive measured data obtained from devices built in 0.11-μm and 0.18-μm technologies. The measured data illustrates that the device input impedance has a nonlinear frequency dependency. It is also shown that this variation in input impedance is a result of gate poly-silicon depletion, which can be modeled by an external RC network connected at the gate of the device. Excellent agreement between the simulation results and the measured data validates the model in the device active region.
Keywords :
MOSFET; RC circuits; impedance matching; semiconductor device models; silicon; 0.11 micron; 0.18 micron; 1 to 20 GHz; MOSFET input impedance; device input impedance; external RC network; gate polysilicon depletion; nonlinear frequency dependency; Frequency measurement; Impedance measurement; Large scale integration; Length measurement; MOSFET circuits; Microwave circuits; Noise measurement; Quantum capacitance; Radio frequency; Testing; Gate depletion effect; input impedance model;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.873454
