Title :
Comment on Metal-nitride--oxide--silicon avalanche-injection memory
Author :
Mellor, P.J.T. ; Dunn, P.J.
Author_Institution :
Post Office, Research Department, London, UK
Keywords :
electron avalanches; metal-insulator-semiconductor devices; semiconductor storage devices; MNOS transistors; capacitance/voltage plots; junction avalanche; semiconductor memory; shift; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730182
