A 9-50-GHz Gilbert-cell down-conversion mixer in 0.13-μm CMOS technology

Author

Lin, C.-S. ; Wu, P.-S. ; Chang, H.-Y. ; Wang, H.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

16

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

293

Lastpage

295

Abstract

A broadband microwave/millimeter-wave (MMW) Gilbert-cellmixer using standard 1P8M 0.13-μm complementary metal oxide semiconductor (CMOS) technology is presented in this letter. Two radio frequency (RF) transformer baluns are used in RF-and local oscillator (LO)-ports to convert single-ended signals to differential signals. Thin film microstrip line is employed for the matching networks and transformer design. This mixer has a conversion gain of better than 5dB from 9 to 50GHz. Between 5 and 50GHz,the RF- and LO-to-intermediate frequency (IF) isolations are better than 40dB. The RF-to-LO and LO-to-RF isolations are all better than 20dB. To the authors´ knowledge, this is the first CMOS Gilbert-cell mixer operating to MMW frequency to date.

Keywords

CMOS integrated circuits; baluns; microstrip lines; microwave mixers; millimetre wave mixers; oscillators; thin film circuits; 0.13 micron; 9 to 50 GHz; CMOS technology; Gilbert-cell mixer; LO-RF isolations; RF transformer baluns; RF-LO isolations; broadband microwave mixer; complementary metal oxide semiconductor technology; down-conversion mixer; local oscillator; millimeter-wave mixer; radio frequency transformer baluns; thin film microstrip line; CMOS technology; Impedance matching; Local oscillators; Microstrip; Microwave technology; Millimeter wave technology; Mixers; RF signals; Radio frequency; Semiconductor thin films; Active mixer; Gilbert cell; complementary metal oxide semiconductor (CMOS); microwave monolithic integrated circuit (MMIC); wideband;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.873492

Filename

1626265