DocumentCode :
922535
Title :
A 12-GHz 1-W GaAs MESFET Amplifier
Author :
Nakatani, Masaaki ; Kadowaki, Yoshinobu ; Ishii, Takashi
Volume :
27
Issue :
12
fYear :
1979
fDate :
12/1/1979 12:00:00 AM
Firstpage :
1066
Lastpage :
1070
Abstract :
A practical method using small signal S22 is presented for the design of GaAs MESFET power amplifier. A five-stage MIC amplifier, which delivers 1-W power output with 27-dB linear gain in the 12-GHz band, was constructed based on this method. Further improvement in the power performance of the amplifier was investigated using newly developed flip-chip MESFET´s resulting in 4-W and 2-W power outputs for a unit and a five-stage amplifier, respectively.
Keywords :
FETs; Gallium arsenide; MESFETs; Microwave integrated circuits; Packaging; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Scattering parameters;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1979.1129792
Filename :
1129792
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=922535
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