Title :
Observation of resonant tunneling at room temperature in GaInP/GaAs/GaInP double-heterojunction bipolar transistor
Author :
Liu, William ; Seabaugh, Alan C. ; Henderson, Timothy S. ; Yuksel, Ayca ; Beam, Edward A., III ; Fan, Shou-Kong
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
Negative differential resistance (NDR) has been observed at room temperature in GaInP/GaAs double-heterojunction bipolar transistors (DHBTs). Both the common-emitter and common-base current-voltage characteristics and their magnetic field dependence have been studied to confirm that the observed NDR is due to resonant tunneling. The collector-base voltages at which the collector current resonances occur are calculated and are consistent with the measured values. The devices exhibit an offset voltage of 57 mV and saturation voltage of ⩽ 2-V, both of which are the lowest reported values for GaInP/GaAs DHBTs. The collector-base breakdown voltage in these DHBTs is 31 V, and its variation with junction temperature is measured and described
Keywords :
III-V semiconductors; electric breakdown of solids; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; negative resistance; resonant tunnelling devices; 31 V; 57 mV; DHBTs; GaInP-GaAs-GaInP; NDR; collector current resonances; collector-base breakdown voltage; collector-base voltages; common-base current-voltage characteristics; double-heterojunction bipolar transistor; junction temperature; magnetic field dependence; negative differential resistance common-emitter current-voltage characteristics; resonant tunneling; room temperature; saturation voltage; Bipolar transistors; Current measurement; Current-voltage characteristics; Double heterojunction bipolar transistors; Gallium arsenide; Magnetic field measurement; Magnetic resonance; Resonant tunneling devices; Temperature measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
