Title :
A DC to 10-GHz 6-b RF MEMS time delay circuit
Author :
Nordquist, C.D. ; Dyck, W. ; Kraus, M. ; Reines, I.C. ; Goldsmith, L. ; Cowan, D. ; Plut, T.A. ; Austin, F., IV ; Finnegan, P.S. ; Ballance, M.H. ; Sullivan, T.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
5/1/2006 12:00:00 AM
Abstract :
A 6-b radio frequency (RF) microelectromechanical system (MEMS) time-delay circuit operating from dc to 10 GHz with 393.75-ps total time delay is presented. The circuit is fabricated on 250-μm-thick alumina and uses metal contacting RF MEMS switches to realize series-shunt SP4T switching networks. The circuit demonstrates 1.8+/-0.6 dB of loss at 10 GHz and has linear phase response across the entire band with accuracy of better than a least significant bit for most states.
Keywords :
delay circuits; microswitches; microwave integrated circuits; 0 to 10 GHz; 250 micron; 6 bit; RF MEMS switches; SP4T switching networks; linear phase response; radio frequency microelectromechanical system; time delay circuit; Antenna arrays; Delay effects; Delay lines; Micromechanical devices; Phase shifters; Phased arrays; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Switching circuits; Delay circuits; microelectromechanical (MEMS) devices; microwave phase shifters; switches;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.873600
