Title :
Hot carrier evaluation of MOSFETs in ULSI circuits using the photon emission method
Author :
Uraoka, Yukiharu ; Tsutsu, Noriko ; Morii, Tomoyuki ; Tsuji, Kazuhiro
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
8/1/1993 12:00:00 AM
Abstract :
Photon emission from MOSFETs by hot carrier effect under AC operation is studied. A method to estimate the lifetime of MOSFETs in LSI chips, which uses the photon emission, is proposed. This method is based on experimental data showing that the lifetime of hot-carrier degradation is described by a universal curve with respect to the photon count at a wavelength of 200 nm. Quantitative estimations of lifetimes of MOSFETs in a real LSI are reported. This method is applied to the lifetime estimation of a CMOS microprocessor
Keywords :
CMOS integrated circuits; VLSI; hot carriers; insulated gate field effect transistors; integrated circuit testing; photon counting; AC operation; CMOS microprocessor; MOSFETs; ULSI circuits; hot carrier effect; lifetime; photon count; photon emission method; universal curve; Circuits; Degradation; Hot carrier effects; Hot carriers; Large scale integration; Life estimation; Lifetime estimation; MOSFETs; Microprocessors; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
