Title :
Effects of nonuniform doping on generation-lifetime measurement in m.o.s. capacitors
Author :
Calzolari, P.U. ; Graffi, S. ; Morandi, Carlo
Author_Institution :
Istituto di Elettronica, FacoltÃ\xa0 di Ingegneria, Bologna, Italy
Abstract :
A theoretical investigation of the transient behaviour of an m.o.s. capacitor pulsed into inversion shows that current and capacitance measurements provide a reliable method for the evaluation of the bulk generation lifetime, even in the presence of moderately nonuniform doping concentrations.
Keywords :
electron-hole recombination; metal-insulator-semiconductor structures; semiconductor doping; MOS capacitors; bulk generation lifetime; evaluation; nonuniform doping effects; transient behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730198
