• DocumentCode
    922725
  • Title

    DC- and Microwave-Biased Extrinsic GaAs Photoconductors

  • Author

    Crouch, J.N., Jr.

  • Volume
    28
  • Issue
    1
  • fYear
    1980
  • fDate
    1/1/1980 12:00:00 AM
  • Firstpage
    51
  • Lastpage
    54
  • Abstract
    The theoretical performance of dc- and microwave-biased extrinsic GaAs photoconductors is presented. The variables are the electrical bandwidth (1 kHz to 10 MHz) and the background photon irradiance (108 to 10/sup16/ ph/s˙cm2). Experimental results taken from the literature are compared to the theoretical values. It is concluded that the theoretical performance of a microwave-biased extrinsic GaAs photoconductor exceeds that of its dc-biased counterpart, particularly at wide electrical bandwidths and / or low backgrounds.
  • Keywords
    Bandwidth; Capacitance; Circuits; Conductivity; Detectors; Gallium arsenide; Microwave theory and techniques; Photoconducting materials; Photoconductivity; Resistors;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1980.1130006
  • Filename
    1130006