DocumentCode
922725
Title
DC- and Microwave-Biased Extrinsic GaAs Photoconductors
Author
Crouch, J.N., Jr.
Volume
28
Issue
1
fYear
1980
fDate
1/1/1980 12:00:00 AM
Firstpage
51
Lastpage
54
Abstract
The theoretical performance of dc- and microwave-biased extrinsic GaAs photoconductors is presented. The variables are the electrical bandwidth (1 kHz to 10 MHz) and the background photon irradiance (108 to 10/sup16/ ph/s˙cm2). Experimental results taken from the literature are compared to the theoretical values. It is concluded that the theoretical performance of a microwave-biased extrinsic GaAs photoconductor exceeds that of its dc-biased counterpart, particularly at wide electrical bandwidths and / or low backgrounds.
Keywords
Bandwidth; Capacitance; Circuits; Conductivity; Detectors; Gallium arsenide; Microwave theory and techniques; Photoconducting materials; Photoconductivity; Resistors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1980.1130006
Filename
1130006
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