Title :
DC- and Microwave-Biased Extrinsic GaAs Photoconductors
Author :
Crouch, J.N., Jr.
fDate :
1/1/1980 12:00:00 AM
Abstract :
The theoretical performance of dc- and microwave-biased extrinsic GaAs photoconductors is presented. The variables are the electrical bandwidth (1 kHz to 10 MHz) and the background photon irradiance (108 to 10/sup16/ ph/s˙cm2). Experimental results taken from the literature are compared to the theoretical values. It is concluded that the theoretical performance of a microwave-biased extrinsic GaAs photoconductor exceeds that of its dc-biased counterpart, particularly at wide electrical bandwidths and / or low backgrounds.
Keywords :
Bandwidth; Capacitance; Circuits; Conductivity; Detectors; Gallium arsenide; Microwave theory and techniques; Photoconducting materials; Photoconductivity; Resistors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1980.1130006
