Impact of reactive ion etching using O₂+CHF₃ plasma on the endurance performance of FLOTOX EEPROM cells

Author

Papadas, C. ; Ghibaudo, G. ; Pananakakis, G. ; Pio, F. ; Riva, C. ; Ghezzi, P.

Author_Institution

Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France

Volume

40

Issue

8

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

1549

Lastpage

1551

Abstract

The influence of the reactive ion etching (RIE) process step performed with O₂+CHF₃ plasma on the endurance performance of FLOTOX EEPROM cells is investigated. The comparison with the standard wet etching procedure (WEP) shows that the observed higher programming window degradation ΔW_p as well as the unbalanced high-to-low state threshold-voltage shifts can be quantitatively attributed to the fluorine (F) contamination of the tunnel oxide layer near the floating gate (FG) electrode

Keywords

EPROM; circuit reliability; integrated circuit testing; integrated memory circuits; sputter etching; FLOTOX EEPROM cells; O₂; endurance performance; floating gate; programming window degradation; reactive ion etching; trifluoromethane; tunnel oxide layer; unbalanced high-to-low state threshold-voltage shifts; Contamination; Degradation; EPROM; Microelectronics; Plasma applications; Plasma devices; Research and development; Thickness control; Threshold voltage; Wet etching;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.223719

Filename

223719

Impact of reactive ion etching using O2+CHF3 plasma on the endurance performance of FLOTOX EEPROM cells

Papadas, C. ; Ghibaudo, G. ; Pananakakis, G. ; Pio, F. ; Riva, C. ; Ghezzi, P.

jour

Impact of reactive ion etching using O₂+CHF₃ plasma on the endurance performance of FLOTOX EEPROM cells