Title :
Discharge treatment of W-Si system for silicidation
Author :
Singh, Awatar ; Vyas, P.D. ; Khokle, W.S. ; Singh, Chatar ; Lal, K.
Author_Institution :
CEERI, Pilani, India
fDate :
8/1/1993 12:00:00 AM
Abstract :
An extremely reliable tungsten silicide is formed by reacting tungsten film with silicon wafer. The tungsten film is RF magnetron sputter-deposited onto a silicon wafer and is subjected to a novel discharge treatment. As a result, an amorphous tungsten silicide is produced. An effective tungsten silicide with tetragonal end phase and low sheet resistance forms when the sample is suitably vacuum-annealed at high temperature
Keywords :
annealing; metallisation; sputtered coatings; tungsten compounds; RF magnetron sputter-deposited; WSi2; discharge treatment; metallisation; sheet resistance; silicidation; tetragonal end phase; vacuum-annealed; Amorphous magnetic materials; Annealing; Radio frequency; Semiconductor films; Silicidation; Silicides; Silicon; Sputtering; Tungsten; X-ray diffraction;
Journal_Title :
Electron Devices, IEEE Transactions on
