Title :
Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond
Author :
Venkatesan, V. ; von Windheim, J.A. ; Das, K.
Author_Institution :
Kobe Steel USA Inc., Research Triangle Park, NC, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond crystals are investigated. Logarithmic plots of the forward characteristics of these rectifying contacts indicate a space-charge-limited current conduction that is influenced by the presence of deep-level states. A simple analysis of these characteristics is used to identify various deep-level states in the energy range 0.5-0.8 eV above the valence band
Keywords :
deep levels; diamond; semiconductor-metal boundaries; solid-state rectifiers; space-charge-limited conduction; current-voltage characteristics; deep-level states; forward characteristics; rectifying contacts; semiconducting diamond; space-charge-limited current conduction; Crystalline materials; Crystallization; Crystals; Electron traps; Fabrication; Gold; Schottky diodes; Semiconductivity; Semiconductor diodes; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
