Title :
A simple two-dimensional model for subthreshold channel-length modulation in short-channel MOSFETs
Author :
Green, Keith R. ; Fossum, Jerry G.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
A physical yet simple model that describes subthreshold channel-length modulation and its complex relationship with drain-induced barrier lowering (DIB) in short-channel MOSFETs is derived. The underlying quasi-two-dimensional analysis produced a V DS-independent value for the modulated channel length in weak inversion, which can be used to simplify and correct subthreshold current simulation. The model, supported by numerical device simulation, further gives insight regarding how channel-length modulation scales with structural parameters
Keywords :
insulated gate field effect transistors; semiconductor device models; drain-induced barrier lowering; modulated channel length; numerical device simulation; quasi-two-dimensional analysis; short-channel MOSFETs; structural parameters; subthreshold channel-length modulation; subthreshold current simulation; two-dimensional model; weak inversion; Breakdown voltage; Electric breakdown; Electron devices; Epitaxial layers; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MOSFETs; Physics;
Journal_Title :
Electron Devices, IEEE Transactions on
