A simple two-dimensional model for subthreshold channel-length modulation in short-channel MOSFETs

Author

Green, Keith R. ; Fossum, Jerry G.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

40

Issue

8

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

1560

Lastpage

1563

Abstract

A physical yet simple model that describes subthreshold channel-length modulation and its complex relationship with drain-induced barrier lowering (DIB) in short-channel MOSFETs is derived. The underlying quasi-two-dimensional analysis produced a V _DS-independent value for the modulated channel length in weak inversion, which can be used to simplify and correct subthreshold current simulation. The model, supported by numerical device simulation, further gives insight regarding how channel-length modulation scales with structural parameters

Keywords

insulated gate field effect transistors; semiconductor device models; drain-induced barrier lowering; modulated channel length; numerical device simulation; quasi-two-dimensional analysis; short-channel MOSFETs; structural parameters; subthreshold channel-length modulation; subthreshold current simulation; two-dimensional model; weak inversion; Breakdown voltage; Electric breakdown; Electron devices; Epitaxial layers; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MOSFETs; Physics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.223724

Filename

223724