Title :
Radiation hardness of MOSFETs with N2O-nitrided gate oxides
Author :
Lo, G.Q. ; Joshi, A.B. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
Radiation hardness of furnace N2O-nitrided gate oxides was investigated for both n- and p-channel MOSFETs by exposing devices in an X-ray radiation system. An enhanced degradation was observed in both control and N2O-nitrided MOSFETs with reduction in the channel length. Compared to MOSFETs with control oxides, N2O-nitrided MOSFETs show an enhanced radiation hardness against positive charge buildup and interface state generation. The effects of channel hot carriers on the irradiated devices with subsequent low-temperature forming gas annealing were also studied. The results show that N2O-nitrided oxides have a greatly enhanced resistance against radiation-induced neutral electron trap generation
Keywords :
annealing; hot carriers; insulated gate field effect transistors; interface electron states; nitridation; radiation hardening (electronics); MOSFETs; X-ray radiation system; channel hot carriers; channel length; degradation; furnace N2O-nitrided gate oxides; interface state generation; irradiated devices; low-temperature forming gas annealing; positive charge buildup; radiation hardness; radiation-induced neutral electron trap generation; Bipolar transistors; Electron devices; Electron traps; Frequency; Furnaces; Interface states; Large scale integration; MOSFET circuits; Silicon; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
