Title :
A new method for on wafer noise measurement
Author :
Dambrine, Gilles ; Happy, Henri ; Danneville, Francois ; Cappy, Alain
Author_Institution :
Dept. Hyperfreqences es Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve D´´Ascq, France
fDate :
3/1/1993 12:00:00 AM
Abstract :
A method for measuring the noise parameters of MESFETs and HEMTs is presented. It is based on the fact that three independent noise parameters are sufficient to fully describe the device noise performance. It is shown that two noise parameters, Rn and |YOPT|, can be directly obtained from the frequency variation of the noise figure F50 corresponding to a 50 Ω generator impedance. By using a theoretical relation between the intrinsic noise sources as additional data, the F50 measurement only can provide the four noise parameters. A good agreement with more conventional techniques is obtained
Keywords :
MMIC; Schottky gate field effect transistors; electric noise measurement; equivalent circuits; field effect integrated circuits; high electron mobility transistors; integrated circuit testing; microwave measurement; semiconductor device noise; semiconductor device testing; solid-state microwave devices; HEMTs; MESFETs; device noise performance; noise parameters; on wafer noise measurement; Active noise reduction; Admittance; Circuit noise; Frequency; Impedance; MESFETs; Noise figure; Noise generators; Noise measurement; Testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
