A new method for on wafer noise measurement

Author

Dambrine, Gilles ; Happy, Henri ; Danneville, Francois ; Cappy, Alain

Author_Institution

Dept. Hyperfreqences es Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve D´´Ascq, France

Volume

41

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

375

Lastpage

381

Abstract

A method for measuring the noise parameters of MESFETs and HEMTs is presented. It is based on the fact that three independent noise parameters are sufficient to fully describe the device noise performance. It is shown that two noise parameters, R_n and |Y_OPT|, can be directly obtained from the frequency variation of the noise figure F₅₀ corresponding to a 50 Ω generator impedance. By using a theoretical relation between the intrinsic noise sources as additional data, the F₅₀ measurement only can provide the four noise parameters. A good agreement with more conventional techniques is obtained

Keywords

MMIC; Schottky gate field effect transistors; electric noise measurement; equivalent circuits; field effect integrated circuits; high electron mobility transistors; integrated circuit testing; microwave measurement; semiconductor device noise; semiconductor device testing; solid-state microwave devices; HEMTs; MESFETs; device noise performance; noise parameters; on wafer noise measurement; Active noise reduction; Admittance; Circuit noise; Frequency; Impedance; MESFETs; Noise figure; Noise generators; Noise measurement; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.223734

Filename

223734