Title :
High-field transport in indium phosphide
Author :
Fawcett, W. ; Herbert, D.C.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Abstract :
Theoretical estimates of intervalley scattering rates in InP are used to determine velocity/field curves. The results do not support the 3-level model of high-field transport in this material.
Keywords :
III-V semiconductors; electron mobility; high field effects; indium compounds; III-V semiconductors; electron mobility; highfield effects; indium compounds; velocity/field curves;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730221
