DocumentCode
922954
Title
A comparative study of IMPATT diode noise properties
Author
Levine, P.A. ; Chan, V.W.
Volume
60
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
745
Lastpage
746
Abstract
The amplifier and oscillator noise properties of IMPATT diodes fabricated with diffused and epitaxial p+-n junctions in both Si and GaAs have been measured. Circuit parameters which effect noise have been held constant in order to obtain a valid comparison. The GaAs epitaxially grown junction p+-n diodes were found to have the best noise properties.
Keywords
Circuit noise; Dielectric losses; Diodes; Gallium arsenide; Light scattering; Optical amplifiers; Optical films; Optical noise; Optical scattering; Optical waveguides;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8754
Filename
1450684
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