DocumentCode
923062
Title
A new approach to bipolar device modeling for CAD
Author
Fossum, Jerry G.
Volume
60
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
756
Lastpage
757
Abstract
A new approach to modeling which yields accurate large-signal models for bipolar devices, including all important fundamental effects and their interactions, is introduced. The resulting models lend themselves to efficient analysis by SCEPTRE while demonstrating substantial exactness. Steady-state transistor-model characteristics depicting general capabilities of the modeling technique are presented.
Keywords
Capacitance; Computational modeling; Dielectric loss measurement; Dielectric materials; Loss measurement; Optical fiber communication; Optical fiber losses; Optical fibers; Steady-state; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8765
Filename
1450695
Link To Document