Title :
Computer simulation of a memory device using a Gunn effect diode
Author :
Imada, Hiroaki ; Morisue, M. ; Sumi, Takuya
fDate :
6/1/1972 12:00:00 AM
Abstract :
The computer simulation of a memory device using a Gunn effect diode is described, and its detailed mechanism of operation is demonstrated. The method of computation is based on the relaxation technique to solve Poisson´s equation describing the behavior of charges in the diode. The results of simulation prove the possibility of a memory operation of the device.
Keywords :
Anodes; Circuit simulation; Computational modeling; Computer simulation; Diodes; Gunn devices; Logic devices; Poisson equations; Pulse circuits; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8770
