• DocumentCode
    923163
  • Title

    Electrical properties and simplified theory of a particular junction field-effect transistor operating with a forward gate-source bias

  • Author

    Esteve, Daniel ; Ezz El Arab, M.

  • Author_Institution
    CNRS, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
  • Volume
    9
  • Issue
    15
  • fYear
    1973
  • Firstpage
    339
  • Lastpage
    341
  • Abstract
    The electrical properties of an annular junction field-effect transistor operating with a forward bias are presented. To obtain an insight into the basic physical mechanisms governing its operation, we also present a simplified theory of the device, and compare it successfully with experimental data.
  • Keywords
    field effect transistors; electric current measurement; electrical properties; field effect transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730245
  • Filename
    4236192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923163