Title :
Electrical properties and simplified theory of a particular junction field-effect transistor operating with a forward gate-source bias
Author :
Esteve, Daniel ; Ezz El Arab, M.
Author_Institution :
CNRS, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
Abstract :
The electrical properties of an annular junction field-effect transistor operating with a forward bias are presented. To obtain an insight into the basic physical mechanisms governing its operation, we also present a simplified theory of the device, and compare it successfully with experimental data.
Keywords :
field effect transistors; electric current measurement; electrical properties; field effect transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730245
