Title :
Oxide charge buildup and spread-out during channel-hot-carrier injection in NMOSFETs
Author :
Chen, Wenliang ; Ma, Tso-Ping
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
Oxide charge buildup during channel-hot-carrier (CHC) injection was investigated by the use of a modified charge-pumping technique. An apparent \´turnaround\´ effect in local oxide charge density during low gate voltage (V/sub T/>
Keywords :
electron traps; hole traps; hot carriers; insulated gate field effect transistors; NMOSFETs; channel length; channel-hot-carrier injection; damage location; electric field distribution; low gate voltage stressing; modified charge-pumping technique; n-MOSFET; n-channel device; oxide charge buildup; oxide charge spreadout; Charge measurement; Charge pumps; Current measurement; Low voltage; MOSFET circuits; Power generation; Pulse measurements; Senior members; Stress measurement; Time measurement;
Journal_Title :
Electron Device Letters, IEEE
