DocumentCode :
923280
Title :
Reply to Comment on Metal-nitride--oxide--silicon avalanche-injection memory
Author :
Mavor, J.
Author_Institution :
University of Edinburgh, School of Engineering Science, Electrical Engineering Department, Edinburgh, UK
Volume :
9
Issue :
16
fYear :
1973
Firstpage :
349
Keywords :
metal-insulator-semiconductor devices; semiconductor storage devices; MNOS transistors; internal floating gate; semiconductor storage devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730257
Filename :
4236205
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=923280
