DocumentCode :
923296
Title :
Estimate of substrate influence on space-charge-limited current
Author :
de Chambost, E.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Volume :
9
Issue :
16
fYear :
1973
Firstpage :
351
Lastpage :
353
Abstract :
The Mott and Gurney law, which expresses the space-charge-limited current in intrinsic material, cannot be used for planar structures. An I/V curve is plotted for a quasi-intrinsic material. For a doped substrate, the I/V curve is simply displaced by ¿V. In a planar structure, the s.c.l.c. between two n layers, across the p¿ substrate, can be lowered by biasing the substrate.
Keywords :
leakage currents; monolithic integrated circuits; space-charge-limited conduction; substrates; integrated circuits; leakage currents; space charge limited conduction; substrates;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730259
Filename :
4236207
Link To Document :
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