• DocumentCode
    923305
  • Title

    Analytic theory for silicon double-sided n+--n--p--p+ TRAPATT-diode structures

  • Author

    Cottam, M.G.

  • Author_Institution
    University of Essex, Department of Physics, Colchester, UK
  • Volume
    9
  • Issue
    16
  • fYear
    1973
  • Firstpage
    353
  • Lastpage
    354
  • Abstract
    Previous TRAPATT theories for high-efficiency oscillations in avalanche diodes are extended to apply to double-sided n+--n--p--p+ structures, where TRAPATT-mode operation is assumed to occur in both the n- and p-type drift regions. Results are deduced for silicon devices of various different structures, and an optimum double-sided structure is predicted.
  • Keywords
    avalanche diodes; electromagnetic oscillations; transit time devices; Si; avalanche diodes; double sided avalanche devices; electromagnetic oscillations; transit time devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730260
  • Filename
    4236208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923305