Title :
A continuous-wave hybrid AlGaInAs-silicon evanescent laser
Author :
Fang, Alexander W. ; Park, Hyundai ; Jones, Richard ; Cohen, Oded ; Paniccia, Mario J. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California Santa Barbara, CA
fDate :
5/1/2006 12:00:00 AM
Abstract :
We report a novel laser architecture, the hybrid silicon evanescent laser (SEL), that utilizes offset AlGaInAs quantum wells (QWs) bonded to a silicon waveguide. The silicon waveguide is fabricated on a silicon-on-insulator wafer using a complimentary metal-oxide-semiconductor-compatible process, and is subsequently bonded with the AlGaInAs QW structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mW. The maximum temperature for CW operation is 60degC. The maximum single-sided fiber-coupled CW output power at room temperature is 4.5 mW
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; indium compounds; laser modes; plasma materials processing; quantum well lasers; silicon; silicon-on-insulator; wafer bonding; waveguide lasers; 1568 nm; 23 mW; 293 to 298 K; 4.5 mW; 60 degC; AlGaInAs quantum wells; AlGaInAs-Si; III-V active region; O2 plasma-assisted wafer bonding; Si-SiO2; complimentary metal-oxide-semiconductor-compatible process; continuous-wave laser; evanescent laser; hybrid AlGaInAs-silicon laser; low-temperature wafer bonding; optical gain; optical mode; passive silicon waveguide; room temperature; silicon waveguide; silicon-on-insulator wafer; single-sided fiber coupling; Optical coupling; Optical surface waves; Optical waveguides; Plasma confinement; Plasma temperature; Plasma waves; Quantum well lasers; Silicon on insulator technology; Wafer bonding; Waveguide lasers; Complimentary metal–oxide–semiconductor; semiconductor lasers; silicon-on-insulator (SOI) technology;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.874690
