Multiplication factors and breakdown voltages of n+--p and p+--n abrupt junctions

It is shown that, in complementary n⁺ p and p⁺ n abrupt junctions for pure electron or hole multiplication, four different multiplication factors and two breakdown voltages can be defined. As an example, the four multiplication curves for a doping of 10¹⁶ cm^--3, and the breakdown voltages of p⁺ n and n⁺ p abrupt Si junctions, are reported, using the multiplication data of Lee et al. and Van Overstraeten and De Man.