Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel

Author

Akazaki, Tatsushi ; Arai, Kunihiko ; Enoki, Takatomo ; Ishii, Yasunobu

Author_Institution

NTT LSI Lab., Kanagawa, Japan

Volume

13

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

325

Lastpage

327

Abstract

An InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel is proposed and its electron transport properties and device performances have been investigated. By optimizing the thickness and the exact point of insertion in the InAs layer, the mobility and electron velocity at 300 K have been increased by 30% and 15%, respectively, compared to the conventional heterostructure. In addition, a maximum intrinsic transconductance of 970 mS/mm and a maximum current gain cutoff frequency of 58.1 GHz have been attained by a 0.6 mu m-gate-length device.<>

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.6 micron; 300 K; 58.1 GHz; 970 mS; HEMT characteristics; InAlAs-InAs-InGaAs; InGaAs channel; current gain cutoff frequency; device performances; electron transport properties; electron velocity; heterostructure; maximum intrinsic transconductance; mobility; submicron gate length; Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145073

Filename

145073