Title :
Correlation of noise current and voltage in transistor--base regions
Author_Institution :
University of Salford, Department of Electrical Engineering, Salford, UK
Abstract :
One source of noise in bipolar transistors arises from voltages caused by the transverse flow of the noisy component of the base current in the base region. The correlation between noise current and effective noise voltage is discussed with particular reference to idealised configurations and uniformly distributed current. Appropriate equivalent-circuit elements are proposed.
Keywords :
bipolar transistors; equivalent circuits; noise; bipolar transistors; equivalent circuits; noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730277