DocumentCode :
923470
Title :
Correlation of noise current and voltage in transistor--base regions
Author :
Sutcliffe, H.
Author_Institution :
University of Salford, Department of Electrical Engineering, Salford, UK
Volume :
9
Issue :
16
fYear :
1973
Firstpage :
375
Lastpage :
376
Abstract :
One source of noise in bipolar transistors arises from voltages caused by the transverse flow of the noisy component of the base current in the base region. The correlation between noise current and effective noise voltage is discussed with particular reference to idealised configurations and uniformly distributed current. Appropriate equivalent-circuit elements are proposed.
Keywords :
bipolar transistors; equivalent circuits; noise; bipolar transistors; equivalent circuits; noise;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19730277
Filename :
4236225
Link To Document :
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