DocumentCode
923543
Title
A new dielectric isolation technique for bipolar integrated circuits using thin single-crystal silicon films
Author
Kamins, Theodore I.
Volume
60
Issue
7
fYear
1972
fDate
7/1/1972 12:00:00 AM
Firstpage
915
Lastpage
916
Abstract
The fabrication and characteristics of bipolar transistors in thin silicon films formed on insulating substrates by an electrochemical etching process are described, and a new technique for achieving complete dielectric isolation of integrated circuits is discussed.
Keywords
Bipolar integrated circuits; Bipolar transistors; Dielectric substrates; Dielectric thin films; Dielectrics and electrical insulation; Etching; Fabrication; MOSFETs; Semiconductor films; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8807
Filename
1450737
Link To Document