DocumentCode
923576
Title
A new technique for determining the capacitive coupling coefficients in flash EPROMs
Author
San, K. Tamer ; Kaya, Çetin ; Liu, David K Y ; Ma, Tso-Ping ; Shah, Pradeep
Author_Institution
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Volume
13
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
328
Lastpage
331
Abstract
A method for determining the capacitive coupling coefficients of flash erasable programmable read only memories (EPROMs) is introduced. This technique relies on the Fowler-Nordheim erase measurements and source/drain junction leakage characteristics of the device to extract the control gate, source, and drain coupling coefficients. An advantage offered by this method is its use of an actual flash EPROM cell without requiring additional test structures.<>
Keywords
EPROM; electric variables measurement; integrated circuit testing; integrated memory circuits; leakage currents; Fowler-Nordheim erase measurements; capacitive coupling coefficients; erasable programmable read only memories; flash EPROMs; source/drain junction leakage characteristics; Data mining; EPROM; Electric variables; Electrodes; Equations; Nonvolatile memory; Pulse measurements; Substrates; Testing; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.145074
Filename
145074
Link To Document