DocumentCode :
923597
Title :
Static negative resistance due to the geometrical effect of a GaAs bulk element
Author :
Tateno, H. ; Kataoka, S.
Volume :
60
Issue :
7
fYear :
1972
fDate :
7/1/1972 12:00:00 AM
Firstpage :
919
Lastpage :
920
Abstract :
Static differential negative resistance due to the geometrical effect of a bulk element is discussed and the experimental results with an n-GaAs element of concave geometry are presented. It is shown that the static negative resistance appears as a result of the development of a stationary high-field domain in the expanding part of the element.
Keywords :
Cathodes; Conducting materials; Decoding; Electric resistance; Gallium arsenide; Gaussian processes; Geometry; Radio frequency; Rayleigh channels; Signal to noise ratio;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8811
Filename :
1450741
Link To Document :
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