DocumentCode
923666
Title
Switching Characteristics of Nonlinear Field-Effect Transistors: Gallium-Arsenide Versus Silicon
Author
Grubin, H.L.
Volume
28
Issue
5
fYear
1980
fDate
5/1/1980 12:00:00 AM
Firstpage
442
Lastpage
448
Abstract
A study of the switching properties of GaAs FET´s and other nonlinear elements whose high field velocity saturates without negative differential mobility demonstrates that the high-bias swiching times of GaAs are determined by velocity saturation. Silicon switches are also studied, and situations where GaAs and Si switching properties may be similar are discussed.
Keywords
Electron mobility; FETs; Gallium arsenide; Helium; Nonlinear equations; Poisson equations; Recycling; Silicon; Voltage; World Wide Web;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1980.1130098
Filename
1130098
Link To Document