Title :
Intrinsic Response Time of Normally Off MESFET´s of GaAs, Si, and InP
Author :
Ino, Masayuki ; Ohmori, Masamichi
fDate :
5/1/1980 12:00:00 AM
Abstract :
A response time of normally off MESFET´s for high-speed Iogic circuits made of GaAs, Si, and InP was calculated using a two-dimensional numerical analysis. The results indicate that GaAs is the best material among them. The step response of the InP FET is not as fast as expected from v/E characteristics due to low electric field in the channel for low-power logic operation of a normally off FET.
Keywords :
Analytical models; Delay; Dielectric constant; FETs; Gallium arsenide; Impurities; Indium phosphide; Logic; MESFETs; Poisson equations;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1980.1130100
