• DocumentCode
    923681
  • Title

    Intrinsic Response Time of Normally Off MESFET´s of GaAs, Si, and InP

  • Author

    Ino, Masayuki ; Ohmori, Masamichi

  • Volume
    28
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    456
  • Lastpage
    459
  • Abstract
    A response time of normally off MESFET´s for high-speed Iogic circuits made of GaAs, Si, and InP was calculated using a two-dimensional numerical analysis. The results indicate that GaAs is the best material among them. The step response of the InP FET is not as fast as expected from v/E characteristics due to low electric field in the channel for low-power logic operation of a normally off FET.
  • Keywords
    Analytical models; Delay; Dielectric constant; FETs; Gallium arsenide; Impurities; Indium phosphide; Logic; MESFETs; Poisson equations;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1980.1130100
  • Filename
    1130100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923681