Title :
Model of a metal-oxide-silicon transistor operating in the saturation region
Author :
Rossel, P. ; Martinot, H.
Author_Institution :
CNRS, Laboratoire d´Automatique et d´Analyse des Systÿmes, Toulouse, France
Abstract :
The output resistance of an m.o.s. transistor operating in the saturation region is studied experimentally and theoretically. New experimental properties of the `resistance¿current¿ product are described. A model is proposed in which the structure is divided into two sections. In the source section, a gradual length approximation is assumed, taking into account the mobility¿field dependence; while in the drain section, the mobile-carrier charge is included in the `equivalent doping¿. The continuity conditions between the two regions are described. Good agreement is found between the theory and the experimental results.
Keywords :
field effect transistors; resistance (electric); semiconductor device models; field effect transistors; metal insulator semiconductor devices; resistance; saturation region; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730304
