DocumentCode :
923759
Title :
Coplanar-electrode thin-film InSb transistor
Author :
Luo, F.C. ; Epstein, M.
Volume :
60
Issue :
8
fYear :
1972
Firstpage :
997
Lastpage :
999
Abstract :
A thin-film transistor, using very thin flash-evaporated and annealed InSb films as semiconductor in a coplanar-electrode structure, is characterized by a relatively large transconductance and a well-defined saturation region.
Keywords :
Breakdown voltage; Electron traps; Insulation; Leakage current; P-n junctions; Photonic band gap; Temperature; Thin film transistors; Threshold voltage; Tunneling;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1972.8827
Filename :
1450757
Link To Document :
بازگشت