Title :
High-breakdown-voltage MESFET with a low-temperature-grown GaAs passivation layer and overlapping gate structure
Author :
Chen, Chang-Lee ; Mahoney, Leonard J. ; Manfra, Michael J. ; Smith, Frank W. ; Temme, Donald H. ; Calawa, Arthur R.
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
GaAs MESFETs were fabricated using a low-temperature-grown (LTG) high-resistivity GaAs layer to passivate the doped channel between the gate and source and between the gate and the drain. The gate was fabricated such that the source and drain edges of the metal gate overlapped the LTG GaAs passivation layer. The electric fields at the edges of the gate were reduced by this special combination of LTG GaAs passivation and gate geometry, resulting in a gate-drain breakdown voltage of 42 V. This value is over 60% higher than that of similar MESFETs fabricated without the gate overlap.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electric breakdown of solids; gallium arsenide; passivation; 42 V; GaAs passivation layer; MESFET; electric fields; gate geometry; gate-drain breakdown voltage; high breakdown voltage device; metal gate; overlapping gate structure; Electric breakdown; Etching; Gallium arsenide; Gold; HEMTs; Interface states; MESFETs; MISFETs; Passivation; Voltage;
Journal_Title :
Electron Device Letters, IEEE
