A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure

Author

Marczewski, J. ; Zachau, M. ; Asenov, A. ; Koch, F. ; Gruetzmacher, D.

Author_Institution

Dept. of Phys., Tech. Univ., Muenchen, Germany

Volume

13

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

338

Lastpage

340

Abstract

The authors discuss an electronic device with asymmetric contacts to a InGaAs-InP multilayer heterostructure. Current enters via an alloyed ohmic contact into the quantum wells (QWs) and flows laterally along capacitively coupled channels. It leaves via tunneling between the layers and through a forward-biased surface Schottky contact. A step-like I-V dependence is observed and interpreted by a model calculation.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; semiconductor device models; semiconductor quantum wells; tunnelling; InGaAs-InP-Au; MQW; alloyed ohmic contact; asymmetric contacts; capacitively coupled channels; diode device; forward-biased surface Schottky contact; lateral field-effect transport; model calculation; multi-quantum-well; multilayer heterostructure; multiquantum well; step-like I-V dependence; vertical tunneling; Electrons; HEMTs; Indium phosphide; Ohmic contacts; Quantum well devices; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145077

Filename

145077