Title :
Extension of Existing Models to Ion-Implanted MESFET´s
Author :
de Santis, Pietro
fDate :
6/1/1980 12:00:00 AM
Abstract :
This work extends uniform MESFET´s models to MESFET´s with arbitrary doping density profiles. Numerical computations have carried out for ion-implanted devices with a Gaussian doping density profile. Good agreement is found between theory and experiment.
Keywords :
Doping profiles; Electromagnetic heating; Electron devices; MESFETs; National electric code; Notice of Violation; Oscillators; Semiconductor devices; Semiconductor diodes; Semiconductor process modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1980.1130132
