DocumentCode
923987
Title
Extension of Existing Models to Ion-Implanted MESFET´s
Author
de Santis, Pietro
Volume
28
Issue
6
fYear
1980
fDate
6/1/1980 12:00:00 AM
Firstpage
638
Lastpage
647
Abstract
This work extends uniform MESFET´s models to MESFET´s with arbitrary doping density profiles. Numerical computations have carried out for ion-implanted devices with a Gaussian doping density profile. Good agreement is found between theory and experiment.
Keywords
Doping profiles; Electromagnetic heating; Electron devices; MESFETs; National electric code; Notice of Violation; Oscillators; Semiconductor devices; Semiconductor diodes; Semiconductor process modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1980.1130132
Filename
1130132
Link To Document