AC hot-carrier effects in MOSFETs with furnace N/sub 2/O-nitrided gate oxides

Author

Lo, G.Q. ; Ahn, J. ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

13

Issue

6

fYear

1992

fDate

6/1/1992 12:00:00 AM

Firstpage

341

Lastpage

343

Abstract

AC hot-carrier effects in n-MOSFETs with thin ( approximately 85 AA) N/sub 2/O-nitrided gate oxides have been studied and compared with control devices with gate oxides grown in O/sub 2/. Results show that furnace N/sub 2/O-nitrided oxide devices exhibit significantly reduced AC-stress-induced degradation. In addition, they show weaker dependences of device degradation on applied gate pulse frequency and pulse width. Results suggest that the improved AC-hot-carrier immunity of the N/sub 2/O-nitrided oxide device may be due to the significantly suppressed interface state generation and neutral electron trap generation during stressing.<>

Keywords

electron traps; hot carriers; insulated gate field effect transistors; interface electron states; 85 AA; AC hot-carrier effects; AC-hot-carrier immunity; AC-stress-induced degradation; MOSFETs; N/sub 2/O nitrided gate oxides; Si/sub 3/N/sub 4/-SiO/sub 2/-Si; furnace oxide; interface state generation; n-channel devices; neutral electron trap generation; DC generators; Degradation; Frequency; Furnaces; Hot carrier effects; Interface states; MOSFETs; Space vector pulse width modulation; Stress control; Thermal stresses;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145078

Filename

145078