DocumentCode
924051
Title
Comparison of the hot electron-diffusion rates for GaAs and InP
Author
Bauhahn, P.E. ; Haddad, G.I. ; Masnari, N.A.
Author_Institution
University of Michigan, Electron Physics Laboratory, Department of Electrical & Computer Engineering, Ann Arbor, USA
Volume
9
Issue
19
fYear
1973
Firstpage
460
Lastpage
461
Abstract
The diffusion coefficients, parallel and transverse to the electric field, have been computed at 300 and 500 K for GaAs, and at 500 K for InP, by a Monte-Carlo method, and the results are presented.
Keywords
III-V semiconductors; gallium arsenide; high field effects; hot carriers; indium compounds; III-V semiconductors; Monte Carlo method; avalanche devices; diffusion; gallium arsenide; indium compounds; transit time devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730335
Filename
4236286
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