Title :
An 8-18-GHz YIG-Tuned FET Oscillator
Author :
Papp, James C. ; Koyano, Yoshiomi Y.
fDate :
7/1/1980 12:00:00 AM
Abstract :
We report here on the design and construction of a YIG- tuned FET oscillator tunable over the entire 8-18-GHz frequency range. The minimum output power from this device operating into a 50-omega load is about +6 dBm. The addition of a balanced buffer amplifier increases the power to about + 12-dBm minimum. When optimized for the 12-18-GHz band, the oscillator alone generates a minimum of + 10 dBm. The oscillator/ amplifier combination produces at least +15 dBm. We discuss a number of difficulties inherent in the design of broad-band oscillators, especially fixed frequency resonances, linearity, and power drop outs at the low end of the frequency range.
Keywords :
Circuit testing; Diodes; FETs; Frequency; Gunn devices; Microwave oscillators; Notice of Violation; Reflection; Scattering parameters; Tunable circuits and devices;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1980.1130164