Vertical high-mobility wrap-gated InAs nanowire transistor

In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs nanowires [Proc. DRC, 2005, p. 157]. The nanowires have a diameter of 80 nm and are grown using selective epitaxy; a matrix of typically 10 × 10 vertically standing wires is used as channel in the transistor. The authors measure current saturation at V_ds=0.15 V (V_g=0 V), and a high mobility, compared to the previous nanowire transistors, is deduced.