Title :
Characteristics of Al2O3/TiO2 nanolaminates and AlTiO thin films on Si
Author :
Mikhelashvili, V. ; Garshtein, E. ; Eisenstein, G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
5/1/2006 12:00:00 AM
Abstract :
This letter reports a metal-insulator-semiconductor structure based on Al2O3/TiO2 nanolaminates and AlTiO films evaporated on an unheated p-Si substrate. The structure exhibits a low hysteresis in the capacitance-voltage characteristics, a larger dielectric constant leading to a quantum mechanically corrected effective oxide thickness of 1.35-2.1 nm, good stability of the electrical characteristics to thermal processes, a large breakdown electric field of 7.5 MV/cm, and a leakage current density below 5×10-7 A/cm2 at an electric field of 2 MV/cm.
Keywords :
MIS structures; aluminium compounds; dielectric hysteresis; laminates; leakage currents; nanostructured materials; permittivity; silicon; titanium compounds; 1.34 to 2.1 nm; Al2O3-TiO2-Si; AlTiO; capacitance-voltage characteristics; dielectric constant; hysteresis; metal-insulator-semiconductor structure; nanolaminates; thin films; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric constant; Dielectric substrates; Electric variables; Hysteresis; Lead compounds; Metal-insulator structures; Quantum mechanics; Thermal stability; Chemical and structural properties; electrical characterization; electron beam gun deposition; thin dielectric films;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.873879
