Title :
Pulsed silicon double-drift IMPATTs for microwave and millimetre-wave applications
Author :
Pfund, G. ; Podell, A. ; Tarakci, U.
Author_Institution :
Hewlett-Packard, Palo Alto, USA
Abstract :
The letter describes silicon double-drift IMPATT diodes designed for operation at microwave and millimetre-wave frequencies. These devices have delivered pulsed-power outputs of 16 W with 12.3% efficiency in the X band, 11 W with 14% efficiency in the KU band, and 6.4 W with 5.3% efficiency in the Ka band. These results, when combined with the demonstrated high reliability of silicon IMPATTS, should lead to the wide application of double-drift devices in pulsed-radar systems.
Keywords :
IMPATT diodes; microwave oscillators; solid-state microwave devices; 6 to 11W; IMPATT diodes; Ku-band; Si; X-band; double drift; efficiency; microwave oscillators; solid state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730381
