Advanced poly-Si TFT with fin-like channels by ELA

Author

Yin, Huaxiang ; Xianyu, Wenxu ; Cho, Hans ; Zhang, Xiaoxin ; Jung, Jisim ; Kim, Doyoung ; Lim, Hyuck ; Park, Kyungbae ; Kim, Jongman ; Kwon, Jangyeon ; Noguchi, Takashi

Author_Institution

Nano Devices Lab., Samsung Adv. Inst. of Technol., Kyunggi-Do, South Korea

Volume

27

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

357

Lastpage

359

Abstract

The advanced low-temperature polysilicon (poly-Si) thin-film transistor with three-dimensional channels of fin-like profile has been demonstrated using excimer laser annealing and unique undercut structure without any additional patterning process. This approach provides a very narrow fin-like channel in devices with high ratio of film thickness to the width as well as a high-quality poly-Si film in channels with better crystallinity for the effect of columnar-like grain growth following the shrinkage of silicon stripe after laser irradiation. Due to that and the stronger electrical stress on the channel by the multigate, the new device with a fin-like channel structure shows good characteristics of the highest mobility up to 395 cm²/V·s, a subthreshold voltage slope below 400 mV/dec, and an ON-OFF current ratio higher than 10⁶.

Keywords

laser beam annealing; laser beam effects; polymers; semiconductor growth; thin film transistors; 3D fin-like channels; ELA; TFT; electrical stress; excimer laser annealing; grain growth; laser irradiation; low-temperature polysilicon; silicon stripe; thin-film transistor; Annealing; Crystallization; Displays; Semiconductor films; Silicon compounds; Stress; Substrates; Thin film transistors; Very large scale integration; Voltage; Advanced structure; excimer laser annealing (ELA); fin; poly-Si; thin-film transistors (TFTs); three-dimensional (3-D);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.872901

Filename

1626456